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1 2004

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Design of a GaN UV integrated photoreceiver

Wiatrowski A., Boratyński B.

Opto-Electronics Review

2004

Vol. 12, No. 1

165--168

A design of the structure of an integrated GaN photoreceiver for the UV range is presented. The circuit includes an MSM photodetector and an HFET based amplifier. Preliminary data for the design were obtained from the measurements performed on the test structures - CTLM, van der Pauw, Schottky contacts and also performed on discrete devices - MSM detectors, HFET transistors - all fabricated on AlGaN/GaN/sapphire substrates. Frequency response characteristics of the HFET based amplifier and also of the complete MSM-HFET photoreceiverwere computer-simulated. One of the most important steps in device monolithic integration is isolation of the elements. In this project were considered two types of possible elements isolation: plasma etch (mesa) and implant isolation. A set of photolithography masks for chip fabrication on AlGaN/GaN layers was created. Anticipated fabrication of the designed MSM-HFET integrated photoreceiver in 1-um geometry should allow its RF operation.