Wyniki wyszukiwania - BazTech

Ograniczanie wyników

2 Opto-Electronics Review

2 2023

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: infrared photodetector

Sortuj według:

Ogranicz wyniki do:

Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array

Besikci Cengiz, Balcı Saadettin V., Tanış Onur, Güngör Oğuz O., Arpaguş Esra S.

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144563

The authors report the characteristics of a diffraction-grating-free mid-wavelength infrared InP/In₀.₈₅Ga₀.₁₅As quantum well infrared photodetector focal plane array with a 640 × 512 format and a 15 µm pitch. Combination of a normal incident radiation sensing ability of the high-x InxGa1-xAs quantum wells with a large gain property of the InP barriers led to a diffraction-grating-free quantum well infrared photodetector focal plane array with characteristics displaying great promise to keep the status of the quantum well infrared photodetector as a robust member of the new generation thermal imaging sensor family. The focal plane array exhibited excellent uniformity with noise equivalent temperature difference nonuniformity as low as 10% and a mean noise equivalent temperature difference below 20 mK with f/2 optics at 78 K in the absence of grating. Elimination of the diffraction-grating and large enough conversion efficiency (as high as ~70% at a -3.5 V bias voltage) abolish the bottlenecks of the quantum well infrared photodetector technology for the new generation very small-pitch focal plane arrays.

Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure

Bouschet Maxime, Arounassalame Vignesh, Ramiandrasoa Anthony, Perez Jean-Philippe, Péré-Laperne Nicolas, Ribet-Mohamed Isabelle, Christol Philippe

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144549

In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice midwave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 μm at 90 K to 7.44 μm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.