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1

Ocena chropowatości powierzchni tlenku indowo-cynowego (ITO)

Araźna A., Kozioł G., Janeczek K., Futera K., Stęplewski W.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 8

29-30

PL

W pracy wykonano charakterystykę powierzchni warstw tlenku indowo-cynowego (ITO) poddanych różnym sposobom przygotowania podłoża. Oceniano ich chropowatość przy użyciu mikroskopu sit atomowych (AFM). Zastosowano trzy sposoby przygotowania powierzchni ITO: czyszczenie w płuczce ultradźwiękowej w acetonie i alkoholu etylowym (R1) lub alkoholu izopropylowym (R2) w temperaturze otoczenia oraz czyszczenie w roztworze zawierającym NH₄OH, H₂O₂ oraz wodę (R3) w temperaturze 60°C. Wyniki badań wykazały, że właściwości powierzchni ITO ściśle zależą od zastosowanego sposobu przygotowania powierzchni. Najmniejsze wartości średniej (Ra) i średnio-kwadratowej chropowatości (Rms) po trawieniu obserwowano na próbkach ITO trawionych w roztworach R2. Natomiast największe wartości chropowatości uzyskano po czyszczeniu próbek ITO w roztworze R3. Mikrografie AFM wykazały, że powierzchnia tych próbek jest dużo bardziej nierównomierna w porównaniu z próbkami czyszczonymi w roztworach R1 i R2. Na podstawie wyników badań stwierdzono, że roztwór R3 jest zbyt agresywnym roztworem dla warstw ITO i nie może być stosowany do ich trawienia. Uznano, że czyszczenie w ultradźwiękach i alkoholu jest odpowiednie do przygotowania powierzchni ITO.

EN

In this work, a study of the surface properties of treated indium tin oxide (ITO) substrates was made. The surface characteristics of ITO thin films are investigated by means of an AFM (atomic force microscopy) method. We used three different cleaning treatments among others: washing in an ultrasonic bath of acetone and ethyl alcohol (R1) or isopropyl alcohol (R2) in room temperature as well as dipping into solution (prepared from NH₄OH and distilled water - R3) at 60°C. Experimental results show that the ITO surface properties are closely related to the treatment methods. The less value of average (Ra) and root-mean-square (Rms) surface roughness after treatment for samples ITO treated in acetone and isopropyl alcohol was registered. However, the highest value of surface roughness for ITO samples after R3 treatment was obtain. The AFM micrographs showed that surface of R3 ITO treated was the most irregular, compared with the ITO samples R1 and R2. The ITO layers were severely etched by R3 solution and that this treatment was too aggressive to clean ITO surface. Based on the experiments results we stated, that the ultrasonic degreasing in acetone and alcohol could be considered as an effective method of ITO treatment.

2

Carbon nanotube transparent conductive layers for solar cells applications

Sibiński M., Jakubowska M., Znajdek K., Słoma M., Guzowski B.

Optica Applicata

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2011

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Vol. 41, nr 2

375--381

EN

The paper presents the investigation into a possible new photovoltaic (PV) application of carbon nanotube-based elastic layers, manufactured by a screen-printing technique. The optical and mechanical properties of these layers are investigated and compared with ITO, standard transparent conductive oxide utilized in photovoltaic devices. Simulations of new TCO layer functioning in various solar constructions are performed. Finally, first results of a test silicon cell, contacted by proposed material, are reported.

3

Malter effect in thin ITO films

Olesik J., Oleski Z.

Optica Applicata

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2009

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Vol. 39, nr 4

903-914

EN

The subject of the study was field influence on electron emission into vacuum from ITO films deposited on glass surface. The films were deposited onto both surfaces of the glass and examined using the Malter effect controlled by electric field. One of the layers was the field electrode and the other was treated as the electron emitter. The bias voltage was applied to the field electrode. The analysis was carried out at a pressure of 10-5 Pa. Dependences of the secondary emission coefficient on the bias voltage and energy distributions of secondary electrons were determined. The diagrams obtained are characterized by high non-monotonic behaviour. The voltage pulse amplitude spectra were recorded in the multichannel amplitude analyzer. It has been found that pulses count depends exponentially on the bias voltage. The emission efficiency at the same inducing field is affected by the state in which the sample was before the measurement. This means that the field induced electron emission shows hysteresis-like behaviour. The existence of this effect proves that the electric field causes some irreversible changes in the electron emitting ITO layer.

4

Certain effects of field and light induced electron emission from indium thin oxide (ITO) layers

Olesik J.

Optica Applicata

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2005

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Vol. 35, nr 3

485-494

EN

Indium thin oxide (ITO) layers were deposited onto both surfaces of a glass substrate. One of the layers was a field electrode and negative voltage has been applied to it in order to create the internal electric field. Another one was treated as the electron-emitting layer. The studies were carried out in the 10-7 hPa vacuum. As a result of applying polarizing voltage Upol and illuminating by a quartz lamp, photoelectrons are released and enter the electron multiplier. Voltage pulses from the multiplier are recorded in the multichannel amplitude analyzer, creating so-called voltage pulse amplitude spectrum. Dependence of electron emission yield on both the intensity of internal field and illumination was measured. With the increasing the Upoi voltage, the count frequency of pulses grows monotonically. At higher Upol (> |-1 kV|) this dependence is exponential. After illuminating the yield of the field induced electron emission grows as well. The cascade multiplication of electrons, which is responsible for the high emission yield, develops under the influence of the electric field of the order of 1 MV/m. The Gauss approximation suggests that the internal electric field in the interface between a glass and ITO layer has to be taken into account.