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Control of simultaneous effects of the temperature, indium composition and theimpact ionization process on the performance of the InN/InₓGa₁₋xN quantum dot solar cells

Afkir Noureddine, Feddi El Mustapha, Meziane Jaafar, Kouari Youssef, Zazoui Mimoun, Migalska-Zalas Anna

Opto-Electronics Review

2019

Vol. 27, No. 1

25--31

The impact ionization in semiconductor materials is a process that produces multiple charge carrier pairs from a single excitation. This mechanism constitutes a possible road to increase the efficiency of the p-n and p-i-n solar cells junctions. Our study considers the structure of InN/InGaN quantum dot solar cell in the calculation. In this work, we study the effect of indium concentration and temperature on the coefficient of the material type parameter of the impact ionization process for a p(InGaN)-n(InGaN) and p(InGaN)-i(QDs-InN)-n(InGaN) solar cell. Next, we investigate the effect of perturbation such as temperature and indium composition on conventional solar cell’s (p(InGaN)-n(InGaN)) and solar cells of the third generation with quantum dot intermediate band IBSC (p(InGaN-i(QD-InN)-n(InGaN)) by analyzing their behaviour in terms of efficiency of energy conversion at the presence of the impact ionization process. Our numerical results show that the efficiency is strongly influenced by all of these parameters. It is also demonstrated that decreased with the increase of indium concentration and temperature which contributes to an overall improvement of the conversion efficiency.

Impact Ionization Process in Deep Submicron MOSFET

Speransky D., Borzdov A., Borzdov V.

International Journal of Microelectronics and Computer Science

2012

Vol. 3, nr 1

21-24

Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is proposed.