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Analysis of OBS Burst Assembly Queue with Analysis of OBS Burst Assembly Queue with Renewal Input

Hołyński T., Hayat M. F.

Advances in Electronics and Telecommunications

2011

Vol. 2, no. 3

23--30

Ongoing research in Optical Burst Switching (OBS) requires more in-depth studies both in theory and in practice before the technology is realized. In OBS paradigm, traffic from access networks is groomed at edge OBS nodes in the forms of large chunks called bursts. This grooming called assembly is crucial in analyzing the overall performance of OBS networks as it affects the esign of almost all major functions of OBS nodes. The characteristics of assembled traffic and its effects on OBS performance have been already extensively studied in literature. In this work, the sembled traffic is studied using a transform-based approach, since it is a natural way of analyzing such processes where random variables are summed. The main contribution of this paper is formulation of distributions of burst length and burst inter-departure time in form of Laplace transforms, which are valid for general independent lengths and inter-arrival times of assembled ackets. The results can be subsequently inverted analytically or numerically to give full densities or serve as moment generating functions for partial characteristics. A simple method for the distribution of the number of packets in a burst based on discrete Markov chain is provided. Detailed analytical derivations with numerical results are presented for Erlangian traffic and verified by simulations to show good exactness of this approach.

Linear HgCdTe IR FPA 288 × 4 with bidirectional scanning

Vasilyev V. V., Predein A. V., Varavin V. S., Mikhailov N. N., Dvoretsky S. A., Gumenjuk-Sichevska J. V., Golenkov A. G., Reva V. P., Sabinina I. V., Sidirov Y. V., Susliakov A. O., Sizov F. F., Aseev A. L.

Opto-Electronics Review

2010

Vol. 18, No. 3

332-337

The long wavelength (8-12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20-0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4-7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R₀ = 1.6×10⁷ Ω zero bias voltage, which corresponded to R₀A ∼70 Ω •cm² and to the maximal value Rmax = 2.1 × 10⁸ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×10⁸ V/W, the detectivity Dλ * = 2.13 × 10¹¹ cm × Hz½ × W⁻¹, and the noise equivalent temperature difference NETD = 9 mK.

Modelowanie montażu hybrydowego w zakładach pracy chronionej.

Siemieniako F., Śliżewski W.

Technologia i Automatyzacja Montażu

2003

nr 2

34-39