Wyniki wyszukiwania - BazTech

Ograniczanie wyników

3 Optica Applicata

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: hot target

Sortuj według:

Ogranicz wyniki do:

Properties of transparent oxide thin films prepared by plasma deposition

Domaradzki J., Borkowska A., Kaczmarek D., Prociów L.

Optica Applicata

2005

Vol. 35, nr 3

425-430

In this paper, thin films of TiO2 were deposited onto (100) oriented silicon and glass substrates using low pressure hot target reactive magnetron sputtering (LP HTRS) method. X-ray diffraction (XRD) and optical transmission measurements have been applied to study the influence of substrate type on the microstructure and optical properties of the prepared thin films, respectively. Thin films exhibit the TiO2-anatase crystalline state, which could be confirmed by the appearance of peaks of (101) orientation.

On the microstructure of TiHfOx thin films

Domaradzki J., Borkowska A., Kaczmarek D., Prociów L., Wasielewski R., Ciszewski A.

Optica Applicata

2005

Vol. 35, nr 3

431-435

Transition metal oxides, whose optical band gap might be modified by doping or manufacturing using two (or more) oxides with different band gaps, are good candidates for host matrices in luminescent devices. This paper presents structural properties of TiHfOx thin films and analysis of dependence of their optical properties on thin film structure. In order to examine the microstructure of manufactured thin films the X-ray diffraction (XRD) and atomic force microscopy (AFM) were applied. The optical properties of manufactured thin films were investigated by optical transmission method in the spectral range from 200 to 1400 nm.

Structural, optical and electrical characterization of Co-Pd doped TiO2 semiconducting thin films sputtered on silicon

Domaradzki J., Prociów E., Kaczmarek D., Berlicki T., Kudrawiec R., Misiewicz J., Mielcarek W.

Optica Applicata

2003

Vol. 33, nr 4

661-668

The fundamental structural, electrical and optical properties of junction-based devices composed of semiconducting thin films of metal oxide on a semiconductor were examined. Thin films were deposited on silicon and silica substrates by hot target reactive magnetron sputtering process. During the deposition base TiO2 films were doped with Co, Pd transition metals. Electrical and optical beam induced current (OBIC) analysis confirmed the formation of a junction based on a semiconduting thin film of metal oxide–semiconductor interface