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Electroluminescence of Y2O3:Eu and Y2O3:Sm films

Rodionov V. E., Shmidko I. N., Zolotovsky A. A., Kruchinin S. P.

Materials Science Poland

2013

Vol. 31, No. 2

232--239

Electroluminescence of Y2O3:Eu and Y2O3:Sm films, as well as the films coactivated with Eu and Sm, is studied. The electroluminescence spectra are measured. The physical mechanism of electroluminescence is analyzed It is shown that the increase in the heat treatment temperature and the content of doping impurities of the films enhances the intensity of electroluminescence. Additional doping of Y2O3:EuF3 films by the SmF3 impurity, practically does not influence the emission spectrum.

Ambient temperature or moderately cooled semiconductor hot electron bolometer for mm and sub-mm regions

Dobrovolsky V. N., Sizov F. E., Kamenev Y. E., Smirnov A. B.

Opto-Electronics Review

2008

Vol. 16, No. 2

172-178

A model of semiconductor hot electron bolometer (SHEB), in which electromagnetic radiation heats only electrons in narrow-gap semiconductor without its lattice slow-response heating, is considered. Free carrier heating changes the generation-recombination processes that are the reason of semiconductor resistance rise. It is estimated, that Hg₀.₈Cd₀.₂Te detector noise equivalent power (NEP) for mm and sub-mm radiation wavelength range can reach NEP ~ 10⁻¹¹ W at Δf = 1 Hz signal gain frequency bandwidth. Measurements performed at electromagnetic wave frequencies v = 36, 39, 55, 75 GHz, and at 0.89 and 1.58 THz too, with non-optimized Hg₀.₈Cd₀.₂Te antenna-coupled bolometer prototype confirmed the basic concept of SHEB. The experimental sensitivity Sv ~ 2 V/W at T = 300 K and the calculated both Johnson-Nyquist and generation-recombination noise values gave estimation of SHEB NEP ~ 3.5 × 10⁻¹⁰ W at the band-width Δf = 1 Hz and v = 36 GHz.