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2 International Journal of Microelectronics and Computer Science

2 Angelov G. V.

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Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A

Angelov G. V.

International Journal of Microelectronics and Computer Science

2012

Vol. 3, nr 3

111-118

A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.

Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A

Angelov G. V.

International Journal of Microelectronics and Computer Science

2011

Vol. 2, nr 3

105-112

A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.