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1 International Journal of Microelectronics and Computer Science

1 2013

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Analysis in Commutation of a New High Voltage Thyristor Structure for High Temperature

Toulon G., Bourennane A, Isoird K

International Journal of Microelectronics and Computer Science

2013

Vol. 4, nr 2

49--54

In this paper, a high voltage thyristor structure using Schottky contacts on the anode side is analysed through 2D physical simulations in terms of switching performance. The replacement of the P emitter of a conventional symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature while maintaining its reverse blocking capability. It is shown by comparing this structure with a conventional thyristor, that the presence of Schottky contact does not degrade the turn-on process. It is also shown that the presence of Schottky contact reduces the device turn-off time, improving the maximum operating frequency of the device.