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1

Silicon carbide based DC-DC converter – operating analysis

Niewiara Ł., Tarczewski T., Grzesiak L. M.

Poznan University of Technology Academic Journals. Electrical Engineering

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2016

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No. 88

109--119

EN

In this paper operating analysis of DC-DC converter is presented. Silicon Carbide based DC-DC converter is investigated. SiC power switches (i.e. MOSFETs and diodes) were used. Synchronous buck topology is applied for converter structure. The DC-DC converter mathematical model is also presented. The parameters of LC circuit were calculated using shown equations. Working conditions determine the values of output LC circuit (inductance and capacitance). The analysis of working conditions is presented for different switching frequencies. The size of passive components (LC) is compared for different operating points. Experimental tests results were presented. Waveforms of voltage and current signals were also shown.

2

Analysis of circuit and operation for DC–DC converter based on silicon carbide

Niewiara Ł. J., Tarczewski T., Grzesiak L. M.

Computer Applications in Electrical Engineering

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2016

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Vol. 14

268--279

EN

In this paper operating analysis of DC–DC converter is presented. Silicon Carbide based DC–DC converter is investigated. SiC power switches (i.e. MOSFETs and diodes) were used. Synchronous buck topology is applied for converter structure. The DC–DC converter mathematical model is also presented. The parameters of LC circuit were calculated using shown equations. Working conditions determine the values of output LC circuit (inductance and capacitance). Real power semiconductors are equipped in output and input capacitances. This feature may influence the generated input signal. Parasitic capacitances and inductances of the paths causes oscillations and voltage overshoots of the input PWM signal. To avoid such phenomenon, it is necessary to use a snubber circuit. This issue is also presented. The analysis of working conditions is presented for different switching frequencies. The size of passive components (LC) is compared for different operating points. Experimental tests results were presented. Waveforms of voltage and current signals were also shown.

3

Trójfazowy, dwupoziomowy falownik napięcia z tranzystorami Z-FET z węglika krzemu (SiC)

Zdanowski M., Rąbkowski J., Barlik R.

Przegląd Elektrotechniczny

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2014

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R. 90, nr 11

104--107

PL

W artykule przedstawiono główne zagadnienia związane z projektowaniem, budową i badaniami trójfazowego falownika napięcia przy użyciu tranzystorów Z-FET z węglika krzemu charakteryzującego się wysoką sprawnością (>98%) i wysoką częstotliwością przełączeń (do 150kHz). Omówiono dobór warunków pracy tranzystorów, pracujących bez zewnętrznych diod zwrotnych, w kontekście miniaturyzacji układu. Przedstawiono przyjętą metodykę projektowania dla układu o mocy znamionowej S = 6 kVA. Ponadto artykuł zawiera wyniki badań laboratoryjnych falownika o cechach prototypu, który na wyjściu filtru LC wytwarza napięcie przemienne 3x400V RMS.

EN

This paper presents the main issues related to the design, construction and tests of a three-phase voltage source inverter with Silicon Carbide MOSFETs, which is characterized by a high efficiency (>98%) and high switching frequency (up to 150kHz). The selection of the operation conditions of transistors, which are operating without external anti-parallel diodes, in the context of miniaturization of the converter was discussed and the design methodology on the example of converter with rated power S = 6 kVA was presented. Furthermore, the paper shows the results of laboratory tests of the prototype with the output voltages 3x400V RMS.