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1 2008

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GaN - "High Pressure Semiconductor" in Modern Physics and Technology

Grzegory I., Porowski S.

Polish Journal of Chemistry

2008

Vol. 82, nr 10

1869-1890

Due to the strong binding energy of nitrogen molecule, GaN is unstable at high temperatures in relation to its constituents. Consequently, high temperature crystallization methods which are necessary for high quality bulk single crystals, require high pressures. GaN and its ternaries with In and Al form a foundation for the fast est growing sectors of semiconductor technology, such as short wave length optoelectronics and high-power high-frequency electronics. In this paper crystallization, physical properties and applications of GaN single crystals are discussed, with a special focus on the results coming from the Institute of High Pressure Physics of Polish Academy of Sciences.