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Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

Basta M, Kuznicki Z T

Optica Applicata

2012

Vol. 42, nr 4

713--724

Recently shown photonic and optoelectronic potentialities of Si-based materials and devices require an accurate representation for their optical functions. A predictive model of dielectric function for heavily doped and/or highly excited Si:P is presented. The influence of dopants and of free-carrier population has been calculated independently, allowing the determination of accuracy in usual approximations. The effect of Drude parameters on the heavily doped Si:P optical response is taken into account. All results are supported by experimental data.