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Heat path characterization of high-k HfO2-Ta2O5 capacitor in Verilog-A

Masana F. N.

International Journal of Microelectronics and Computer Science

2011

Vol. 2, nr 3

100-104

Thermal impedance measurement of semiconductor devices is one of the standard and well established methods of characterization. From such measurements can be obtained not only behavioral information in the form of graphs or models for thermal simulation, but also structural information about the thermal path involved, from source to sink, that can be very useful in device assembly process characterization and control. Structural information, however, usually requires many processing steps of measured data with its associated calculation burden and numerical errors. This work proposes a method to extract structural information from measured data in a straightforward way, with very few and elementary calculations, thus providing a useful analysis tool.