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Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg₁₋xCdxTe in wide temperature range

Voitsekhovskii A. V., Nesmelov S. N., Dzyadukh S. M.

Opto-Electronics Review

2014

Vol. 22, No. 4

236-244

Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg₁₋xCdxTe (x = 0.22−0.23 and 0.31−0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C−V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C−V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

Voitsekhovskii A. V., Nesmelov S. N., Dzyadukh S. M., Varavin V. S., Dvoretskii S. A., Mikhailov N. N., Sidorov Y. G., Yakushev M. V.

Opto-Electronics Review

2010

Vol. 18, No. 3

259-262

The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg₁₋xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO₂Si₃N₄ and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.