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1 2010

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Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg₁₋xCdxTe

Gasan-Zade S. G., Strikha M. V., Shepelskii G. A.

Opto-Electronics Review

2010

Vol. 18, No. 3

305-309

The intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg₁₋xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5-2.7 kbar, E = 50-55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4-6 times) occur.