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1 2005

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w słowach kluczowych: gallium arsenide, gallium nitride, surface states, bulk traps, photoluminescence, surface photovoltage.

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Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces

Miczek M., Adamowicz B., Hashizume T., Hasegawa H.

Optica Applicata

2005

Vol. 35, nr 3

355-361

The influence of surface state density Nss and bulk non-radiative lifetime t(tau) on room temperature photoluminescence quantum efficiency YPL and surface photovoltage (SPV) versus the excitation light intensity F(fi) was studied theoretically for GaAs and wurtzite GaN using self-consistent computer simulations. It was demonstrated that SPV(F) dependences are more sensitive than YPL (F) to a change in magnitude of Nss, especially for high Nss and at low F, whereas SPV is practically insensitive to t contrary to YPL. The simultaneous measurement of YPL and SPV versus , combined with rigorous computer analysis, seems to be a very promising method for contactless characterization of the surface and bulk trap parameters.