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A Simple Boost Shoot through Control for Single phase Quasi ZSI DC-DC Converters Based on Voltage Doubler Rectifier

Shobanadevi N., Krishnamurty V., Stalin N.

Przegląd Elektrotechniczny

2015

R. 91, nr 9

242-246

The Z-source inverters are recent topological options proposed for buck–boost energy conversion with a number of possible voltage- and current-type circuit. This paper presents new step-up DC-DC converter topologies with improved efficiency, nearly twofold increased gain, over twofold boost factor and reduced ripple free output. The topology contains quasi ZSI (Impedance Source Inverter) which has one diode, two capacitors, two inductors are used to maintain continuous current on the primary side for reducing energy losses in the output, a single phase isolation transformer, and a voltage doubler rectifier (VDR). There are two operating modes shoot-through (ST) and non-shoot through (NST) modes. For controlling quasi ZSI (impedance source inverter), Pulse Width Modulation (PWM) with duty cycle ratio control method is used. By implementing the Simple boost control method of shoot- through technique is achieved in quasi ZSI (impedance source inverter), voltage boost factor and component stresses are considerably reduced when compared to the conventional method.

W artykule zaprezentowano nową topologię przekształtnika DC-DC o zwiększonej skuteczności, zmniejszonych tętnieniach. Zastosowano dwa tryby pracy: shoot-through ST i non shoo through (NST). W układzie zastosowano podwójny układ prostowania VDR. Do sterowania przekształtnika ZSI wykorzystano układ PWM.

Simulation studies on efficiency improvement in isolated full-bridge DC-DC converter using modern power semiconductors

Krupa A.

Poznan University of Technology Academic Journals. Electrical Engineering

2012

No. 71

49--55

Low-voltage high-current energy sources and energy storage devices such as solar panels, fuel cells, super capacitors and batteries deliver output voltage not exceeding several tens of volts. To meet the electric grid standards that voltage should be adjusted to the system DC Bus voltage of around 400 VDC- High efficiency high voltage gain step-up DC-DC converters ensure that interface. This paper presents simulation results of the isolated full-bridge DC-DC boost converter with voltage doubler. In order to achieve higher efficiency modem power MOSFETs with low channel resistance as well as silicon carbide (SiC) Schottky diodes were used. In presented circuit tenfold voltage gain and high conversion efficiency were achieved. Parametric and transient characteristics along with the features of converter simulation model will be described.