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Multifractal characterization of epitaxial silicon carbide on silicon

Ţălu Ş., Stach S., Ramazanov S., Sobola D., Ramazanov G.

Materials Science Poland

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2017

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Vol. 35, No. 3

539--547

EN

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

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Characteristics of Carbide Interfacial Layer Formed During Deposition of DLC Films on 316L Stainless Steel Substrate

Dudek M.

Archives of Metallurgy and Materials

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2017

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Vol. 62, iss. 4

2211--2216

EN

The paper presents the analysis of formation of interfacial layer during deposition of diamond like carbon film (DLC) on the 316L stainless steel by capacitive plasma discharge in the CH4 atmosphere. The structure of the interfacial layer of DLC film was strongly affected by the temperature increase during the initial stages of the process. Initially, thin interfacial layer of 5 nm has been formed. As the temperature had reached 210°C, the second phase of the process was marked by the onset of carbon atoms diffusion into the steel and by the interface thickness increase. Finally, the growth of chromium carbide interface, the upward diffusion of chromium and nickel atoms to film, the etching and the decrease of the DLC film thickness were observed at 233°C. These investigations were carried out ex-situ by spectroscopic ellipsometry, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy.

3

Stress at the initial stage of growth for Lennard-Jones films

Zientarski T., Chocyk D.

Optica Applicata

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2009

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Vol. 39, nr 4

975-979

EN

Molecular dynamics simulation was used to study the influence of a relative size of adsorbed and substrate atoms on the stress of growing films. Atoms in the system interact via the Lennard-Jones potential. The simulations were performed at a fixed value of systems temperature. The relative size of deposited atoms was changed in the range from 0.7 to 1.2, relatively to the size of substrate atoms. Proposed modeling allows to explain the behaviour of mean biaxial stress for systems with different sizes of adsorbed atoms and a substrate. For considered systems, significant changes in mean biaxial stress have only first three monolayers.

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Effect of substrate bias on the microstructure and properties of nanocomposite titanium nitride – based films

Dudek M., Zabeida O., Klemberg-Sapieha J. E., Martinu L.

Journal of Achievements in Materials and Manufacturing Engineering

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2009

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Vol. 37, nr 2

416-421

EN

Purpose: Hard nanocomposite nc-TiN/a-SiN films exhibit very attractive mechanical, tribological, optical and electronic properties related to their microstructure and chemical bonding. Design/methodology/approach: In the present work, we investigate ternary thin film TiSiN systems deposited by plasma assisted reactive pulsed magnetron sputtering (PARPMS) from titanium and silicon targets. PARPMS allows one to effectively control ion bombardment by reactive species (e.g., N2 +, N+) on the surface of the growing film by varying the bias voltage (VB) induced by a radiofrequency (RF) power applied to the substrate. Findings: RF biasing without additional heating of the substrate promotes formation of crystals within the nc films. Specifically, (111) crystal orientation at low VB (- 50 V) changed into (200) when VB was increased above - 600 V. At the same time, hardness (H) and reduced Young’s modulus (Er) of the films changed from H ~ 10 GPa and Er ~ 135 GPa to their maximum values of H ~ 25 GPa and Er ~ 248 GPa at VB = - 600 V. For comparison, for films deposited at 300şC and VB = - 200 V, the maximum values of H and Er of ~ 35 GPa and ~ 350 GPa were observed. Practical implications: The use of the PARPMS to effectively control the mechanical properties and microstructure of transition metal nitride systems films. Originality/value: Discussion of evolution of the film microstructure (crystal size and orientation) at constant film composition and relate it with the energetic aspects of the film growth and film characteristics.