Wyniki wyszukiwania - BazTech

1

Experimental research of the analog multiplier based on field-effect transistors

Kurytnik I. P., Kucheruk V., Kulakov P., Vasilevskyi O.

Przegląd Elektrotechniczny

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2017

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R. 93, nr 11

190--193

EN

The article presents the results of mathematical analysis and experimental studies of analog multiplier based on field-effect transistors. It is established that such multiplier has a wider dynamic range of input signals and a low level of output signal combinational components.

PL

Artykuł prezentuje wyniki analizy matematycznej i doświadczeń eksperymentalnych mnożnika analogowego opartego na tranzystorach polowych. Ustalono, że taki mnożnik posiada szerszy zakres dynamicznych sygnałów wejściowych i niski poziom składowych kombinowanych sygnałów wyjściowych.

2

Modelling of Graphene Field-Effect Transistor for electronic sensing applications

Łuszczek M., Turzyński M., Świsulski D.

Przegląd Elektrotechniczny

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2015

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R. 91, nr 10

170-172

EN

A top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could be employed to measure the external factor intensity.

PL

Przedstawiono model grafenowego tranzystora polowego (GFET). Zastosowana metoda symulacyjna pozwala poprawnie odtworzyć charakterystyki tranzystora GFET i badać efekt domieszkowania wywołanego przez czynniki fizyczne, chemiczne i biologiczne. Pojawienie się w układzie dodatkowego ładunku powoduje przesunięcie charakterystyki prądowo-napięciowej, co może być wykorzystane do pomiaru wielkości działającego czynnika zewnętrznego.

3

Observation of electron injection in an organic field-effect transistor with electroluminescence

Ohshima Y., Kohn H., Lim E., Manaka T., Iwamoto M.

Materials Science Poland

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2009

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Vol. 27, No. 3

719--726

EN

A tetracene field-effect transistor (FET) with Au source and drain electrodes showed p-channel type behaviour, where the injected holes were the main carriers. Application of an ac electric field to the source electrode, while drain and gate electrodes were grounded, induced electroluminescence (EL) around the source electrode that was caused by alternating electron and hole injection. This result indicated that electron injection into tetracene was possible from a metal with a high work function such as Au. The application of an ac voltage superposed on a dc voltage showed that electron injection was assisted by the space-charge field that originated from holes accumulated around the source electrode.

4

Variation Analysis of CMOS Technologies Using Surface-Potential MOSFET Model

Mattausch H. J., Yumisaki A., Sadachika N., Kaya A., Johguchi K., Koide T., Miura-Mattausch M.

Journal of Telecommunications and Information Technology

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2009

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nr 4

37-44

EN

An analysis of the measured macroscopic withinwafer variations for threshold voltage (Vth) and on-current (Ion) over several technology generations (180 nm, 100 nm and 65 nm) is reported. It is verified that the dominant microscopic variations of the MOSFET device can be extracted quantitatively from these macroscopic variation data by applying the surface-potential compact model Hiroshima University STARC IGFET model 2 (HiSIM2), which is presently brought into industrial application. Only a small number of microscopic parameters, representing substrate doping (NSUBC), pocket-implantation doping (NSUBP), carrier-mobility degradation due to gate-interface roughness (MUESR1) and channel-length variation during the gate formation (XLD) are found sufficient to quantitatively reproduce the measured macroscopic within-wafer variations of Vth and Ion for all channel length Lg and all technology generations. Quantitative improvements from 180 nm to 65 nm are confirmed to be quite large for MUESR1 (about 70%) and Lmin(XLD) (55%) variations, related to the gate-oxide interface and the gate-stack structuring, respectively. On the other hand, doping-related technology advances, which are reflected by the variation magnitudes of NSUBC (30%) and NSUBP (25%), are found to be considerably smaller. Furthermore, specific combinations of extreme microscopic parameter-variation values are able to represent the boundaries of macroscopic fabrication inaccuracies for Vth and Ion. These combinations are found to remain identical, not only for all Lg of a given technology node, but also for all investigated technologies with minimum Lg of 180 nm, 100 nm and 65 nm.

5

Projektowanie szerokopasmowych addytywnych wzmacniaczy rozłożonych

Kral J.

Elektrotechnika i Elektronika

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2006

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T. 25, z. 1

38-47

PL

W pracy zaprezentowano (konwencjonalne) wzmacniacze rozłożone, rzadko opisywane w publikacjach wydawanych w kraju, i omówiono ich części składowe (linie transmisyjne naturalne i sztuczne). Przedstawiono i przedyskutowano zależności na wzmocnienie wzmacniacza zarówno przy pominięciu, jak i uwzględnieniu strat w układzie. Zobrazowano przebiegi różnych charakterystyk układu dla konkretnie przyjętego tranzystora. Przedstawiono procedurę projektowania wzmacniacza oraz wyniki symulacji zaprojektowanej struktury w wersjach z różnymi liniami bez strat i ze stratami.

EN

Rarely met in Polish literature conventional distributed amplifiers are presented and their components (natural and artificial transmission lines) are discussed. Amplifier power gain formula for lossless and lossy structures is derived and discussed. Yarious characteristics are calculated and illustrated. Amplifier design procedure is presented as well as simulation results of some structures with lossless and lossy transistor model.