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1

Efekty polowe w warstwach tlenkowych

Olesik J.

Elektronika : konstrukcje, technologie, zastosowania

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2013

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Vol. 54, nr 3

85-89

PL

W pracy badano właściwości emisyjne cienkich i domieszkowanych warstw In₂O₃ i SnO₂ (ITO). Warstwy tlenkowe były nałożone na podłoża szklane i poddane działaniu pola elektrycznego i światła UV. Badano wtórną emisję elektronów sterowaną polem elektrycznym oraz połowo indukowaną emisję elektronową. Natężenie pola elektrycznego wewnątrz emitera było rzędu 1 MV/m. Polowe zjawiska emisyjne bazują na efekcie Maltera. Metoda emisji indukowanej polem polega na analizie widma impulsów napięciowych z powielacza elektronowego. Wyznaczono wydajność emisyjną i rozkłady energetyczne elektronów w zależności od natężenia pola elektrycznego wewnątrz emitera, grubości warstwy ITO oraz oświetlenia. Wyjaśniając mechanizm tych zjawisk podano główne założenia polowego rozdziału warstwy ITO na strefę zubożoną i wzbogaconą w nośniki ładunku. Zaproponowano fenomenologiczny model zjawisk emisyjnych uwzględniający cztery typy mechanizmów emisji elektronowej wywołanej działaniem pola elektrycznego oraz efektami powierzchniowymi i objętościowymi.

EN

In this work, emission properties of thin and doped In₂O₃ and SnO₂ layers (ITO) have been studied. The films were deposited on a glass substrate and exposed to electric field and UV light. The studied emission phenomena were: field induced secondary electron emission and field induced electron emission. Electric field inside the emitter was of the order of 1 MV/m. The field induced electron emission (FIEE) is based on Malter effect. The FIEE measurements relied on determination and analysis of voltage pulse amplitude spectra from a photomultiplier. Emission yield and electron energy distributions as a function of field intensity in the emitter, the ITO thickness and UV illumination have been determined. A phenomenological model of the investigated phenomena has been suggested which includes four types of emission mechanisms: an ordinary one (induced exclusively by electric field) and another caused mainly by surface, volume and tunnel effects.

2

Malter effect in thin ITO films

Olesik J., Oleski Z.

Optica Applicata

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2009

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Vol. 39, nr 4

903-914

EN

The subject of the study was field influence on electron emission into vacuum from ITO films deposited on glass surface. The films were deposited onto both surfaces of the glass and examined using the Malter effect controlled by electric field. One of the layers was the field electrode and the other was treated as the electron emitter. The bias voltage was applied to the field electrode. The analysis was carried out at a pressure of 10-5 Pa. Dependences of the secondary emission coefficient on the bias voltage and energy distributions of secondary electrons were determined. The diagrams obtained are characterized by high non-monotonic behaviour. The voltage pulse amplitude spectra were recorded in the multichannel amplitude analyzer. It has been found that pulses count depends exponentially on the bias voltage. The emission efficiency at the same inducing field is affected by the state in which the sample was before the measurement. This means that the field induced electron emission shows hysteresis-like behaviour. The existence of this effect proves that the electric field causes some irreversible changes in the electron emitting ITO layer.

3

Certain effects of field and light induced electron emission from indium thin oxide (ITO) layers

Olesik J.

Optica Applicata

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2005

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Vol. 35, nr 3

485-494

EN

Indium thin oxide (ITO) layers were deposited onto both surfaces of a glass substrate. One of the layers was a field electrode and negative voltage has been applied to it in order to create the internal electric field. Another one was treated as the electron-emitting layer. The studies were carried out in the 10-7 hPa vacuum. As a result of applying polarizing voltage Upol and illuminating by a quartz lamp, photoelectrons are released and enter the electron multiplier. Voltage pulses from the multiplier are recorded in the multichannel amplitude analyzer, creating so-called voltage pulse amplitude spectrum. Dependence of electron emission yield on both the intensity of internal field and illumination was measured. With the increasing the Upoi voltage, the count frequency of pulses grows monotonically. At higher Upol (> |-1 kV|) this dependence is exponential. After illuminating the yield of the field induced electron emission grows as well. The cascade multiplication of electrons, which is responsible for the high emission yield, develops under the influence of the electric field of the order of 1 MV/m. The Gauss approximation suggests that the internal electric field in the interface between a glass and ITO layer has to be taken into account.