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1 Opto-Electronics Review

1 2007

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Exciton localization behaviour in different well width undoped GaN/Al₀.₀₇Ga₀.₉₃N nanostructures

Sabooni M., Esmaeili M., Haratizadeh H., Monemar B., Paskov P., Kamiyama S., Iwaya M., Amano H., Akasaki I.

Opto-Electronics Review

2007

Vol. 15, No. 3

163-167

We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al₀.₀₇Ga₀.₉₃N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the "S-shape" dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition.