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How to make GaMnAs with high ferromagnetic phase transition temperature?

Sadowski J., Domagała J. Z., Kanski J., Rodriguez C. H., Terki F., Charar S., Maude D.

Materials Science Poland

2006

Vol. 24, No. 3

617--625

We analyze the role of structural defects in GaMnAs and demonstrate how their density can be drastically reduced by in situ post-growth annealing under As capping. Modifications of the magnetic, transport and structural properties of the annealed GaMnAs layers are presented. The main result is that the Curie temperatures are strongly increased relative those of the as-grown layers, from typically 70 - 80 K to 150 - 160 K. The annealed layers exhibit well-ordered smooth surfaces, suitable for further epitaxial overgrowth.