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HgCdTe epilayers on GaAs : growth and devices

Varavin V. S., Vasiliev V. V., Dvoretsky S. A., Mikhailov N. N., Ovsyuk V. N., Sidorov Y. G., Suslyakov A. O., Yakushev M. V., Aseev A. L.

Opto-Electronics Review

2003

Vol. 11, No. 2

99-111

View of basic and specific physical and chemical features of growth and defect formation in mercury cadmium telluride (MTC) heterostructures (HS's) on GaAs substrates by molecular beam epitaxy (MBE) was made. On the basis of this knowledge a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility of growth MCT HS's on substrates up to 4'' in diameter. The development of industrially oriented technology of MCT HS's growth by MBE on GaAs substrates 2'' in diameter and without intentional doping is presented. The electrical characteristics of n-type and p-type of MCT HS's and uniformity of MCT composition over the surface area are excellent. The residual donor and acceptor centres are supposed as hypothetically tellurium atoms in metalic sublattice ("antisite" tellurium) and double-ionised mercury vacancies. The technology of fabricating focal plane arrays is developed. The high quality characteristics of infrared detectors conductance and diode mode are measured. Calculations of detector parameters predicted the improvement in serial resistance and detectivity of infrared diode detectors based on MCT heterostructures with graded composition throughout the thickness.

In-line fibre-optic ellipsometer for sensor application

Kieżun A., Jaroszewicz L. R.

Opto-Electronics Review

2000

Vol. 8, No. 2

175-180

Theoretical and experimental analysis of a new fibre-optic ellipsometer in polarimetric configuration is presented. The main idea of a system operation is based on controlled birefringence introducing on a piece standard single-mode fibre. Estimation of a real-time changes in polarisation state parameter, and the ellipsometer measurement have been done for the known induced birefringence. In the paper, research of the constructed in-line system as a new ellipsometer detection system for the fibre-optic sensor application is also presented.