Development of blue light emitting electroluminescence diode and blue laser is presented. It is shown that these developments are directly related to heteroepitaxial growth of nitrides. Epitaxial Lateral Overgrowth technique has been a breakthrough in nitride heteroepitaxy and finally led to creation of blue laser with a long lifetime. The mechanism responsible for the laser action connected with formation of localized states due to indium fluctuation in InGaN quantum well is discussed.
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