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1 Journal of Achievements in Materials and Manufacturing Engineering

1 2008

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Mechanical and electronical properties of ZnS under pressure

Bilge M., Özdemir Kart S., Kart H. H., Cagin T.

Journal of Achievements in Materials and Manufacturing Engineering

2008

Vol. 31, nr 1

29-34

Purpose: The wide-gap semiconductor materials are very important for application in the fields of optical device technology. ZnS is wide-gap semiconductor that is attractive material due to the polymorphic structural transformation and it is suitable semiconductor for applications in infrared optics, ultraviolet laser devices, electronic image display, high-density optical memory, solar cell etc. The goal is to evaluate mechanical and electrical properties of ZnS dunder pressure. Design/methodology/approach: We report ab-initio calculations of lattice constants, bulk modulus and elastic constants of the B1 (rocksalt), B3 (zincblende) and B4 (wurtzite) structures of ZnS. Ab-initio calculations are based on the density functional theory (DFT) within generalized gradient approximation (GGA) for the exchange-correlation potential. Findings: Phase transition pressures from B4 phase to B3 phase, from B3 phase to B1 phase and from B4 phase to B1 are predicted from intersection of the enthalpy-pressure data for the three phases. These results are consistent with the experimental and other theoretical calculations. Mechanical properties of ZnS under high pressure are also calculated. It is seen that the mechanical properties of ZnS under high pressure are quite different from those ambient condition. The band structure, density of states (DOS) and energy gaps are also given for B3 structure of ZnS. Research limitations/implications: The results are compared with the previous theoretical and experimental data. Originality/value: Evaluation of mechanic and electronical properties of ZnS under pressure.