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Two-Dimensional Analytical Model for Channel Lenght Modulation in Lightly-Doped DG FETs

Weidemann M., Kloes A., Schwarz M., Iniguez B.

Electronics and Telecommunications Quarterly

2009

Vol. 55, No 4

549-562

With this paper we publish a possibility to calculate the shortening of the channel in SOI DoubleGate FETs operating in saturation with a 2D analytical solution of Poisson's equation. The model inherently includes 2D effects by solving the differential equation with conformai mapping technique and does not introduce unphysical fitting parameters. Also these fitting parameters have only a minor influence on the model results. We compared our model to numerical data based on TCAD Sentaurus simulations and it is in good agreement with the results.