Tunnel conductance G(V) was calculated for junctions between a normal metal and a spatially inhomogeneous superconductor with a dielectric gap on the nested sections of the Fermi surface or between two such superconductors. The dielectric gapping was considered to be a consequence of the charge density wave (CDW) appearance. Spatial averaging was carried out over domains with randomly varying parameters of the CDW superconductor (CDWS). The calculated G(V)s demonstrate a smooth transformation from patterns with a pronounced dip-hump structure (DHS) at low temperature, T, into those with a pseudogap depletion of the electron density of states at higher T within the range of actual critical temperatures of the CDWS domains. Thus, it is shown that both the DHS and the pseudogap have the same origin. This circumstance provides a new insight into the problem and explains the peculiar features of G(V) for Bi2Sr2CaCu2O8+δ and related high-Tc cuprates. At the same time, the approach, being quite general, can be applied to other CDWSs which belong to various other classes of materials.
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