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1

Thermo-optic effects in solid state lasers end-pumped by fiber coupled diodes

Jabczyński J. K., Jaguś J., Żendzian W., Kwiatkowski J.

Opto-Electronics Review

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2005

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Vol. 13, No. 1

69--74

EN

Review of thermo-optic effects in gain media of diode pumped lasers is presented. Methods of modelling and compensation of such effects are discussed. Results of characterization of end-pumped lasers by means of energetic and caustics measurement techniques are presented and discussed. Also application of Wigner distribution method for characterization of aberrated laser beams is discussed. Thermally induced astigmatism was observed for the anisotropic rods at high heat load.

2

Measurement of Q-Switching & Mode Locking in diode pumped Nd:YVO₄ laser with passive saturable absorbers

Kwiatkowski J., Jabczyński J. K., Żendzian W.

Biuletyn Wojskowej Akademii Technicznej

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2005

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Vol. 54, nr 11

35-41

EN

The saturable absorbers (Cr⁴⁺:YAG, GaAs and LiF crystals for 1064 nm wavelength, V³⁺:YAG crystals for 1340 nm respectively) were examined as passive Mode Lockers and Q-switches in diode pumped Nd:YVO₄ lasers in the Z-type resonators. In each case, partially modulated long trains of QML pulses were observed. As a rule, envelopes with about 1 µs duration and more than 50% depth of modulation were observed. For stabilization of the mode locking trains the nonlinear crystals (KTP or LBO) as negative feedback elements were inserted. The fully modulated QML trains for intracavity II harmonic conversion at 670 nm wavelength in V³⁺:YAG Q-switched Nd:YVO₄ laser with LBO crystal were demonstrated.

PL

W artykule przedstawiono wyniki badań lasera Nd:YVO₄ pracującego w konfiguracji rezonatora typu "Z" z pasywnymi modulatorami dobroci (Cr⁴⁺:YAG, GaAs oraz LiF na długości fali generacji 1064 nm, V³⁺:YAG na dlugości fali 1340 nm). Obserwowano impulsy laserowe z synchronizacją modów o czasie trwania obwiedni około 1 µs i głębokości modulacji powyżej 50%. W celu polepszenia stabilności synchronizowanych modów jako ujemne sprzężenie wykorzystano nieliniowy element w postaci kryształu KTP lub LBO. Zaobserwowano pełną głębokość modulacji promieniowania o długości fali 670 nm w laserze Nd:YVO₄ z przełącznikiem dobroci V³⁺: YAG z przetwarzaniem na II harmoniczną za pomocą kryształu LBO.

3

Spectral and generation characteristics of YAG:Nd³⁺ crystals with high concentration of Nd³⁺ ions

Mierczyk Z., Kopczyński K., Żendzian W., Łukasiewicz T.

Opto-Electronics Review

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2001

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Vol. 9, No. 1

83-90

EN

The paper presents investigation results of optical, spectroscopic, and generation parameters of YAG:Nd³⁺ with higher concentration of Nd³⁺ ions (1.1–1.8 at. % Nd³⁺). YAG:Nd³⁺ single crystals were obtained by the Czochralski method. Investigations on optical quality were carried out using elastoscopic and interferometric methods. Absorption spectra within the spectral range of 200–3000 nm (∆ʎ = 1 nm) and pumping range of 750-850 nm (∆ʎ = 0.1 nm) were determined. Also the spectra of luminescence induced with radiation emitted by a laser diode of 808 nm were investigated and lifetime of Nd³⁺ ions in the upper laser level (⁴F₂/₃) was determined. In the all investigated crystals, doped up to 1.3 at.% Nd³⁺, the time of fluorescence decay from ⁴F₂/₃ level is 230 us. It was stated that high level of Nd³⁺ ions doping (above 1.33 at. % Nd³⁺) causes reduction of lifetime of the upper level ⁴F₂/₃ as a result of concentric quenching of luminescence. For the crystals of 1.8 at. % Nd³⁺ concentration, upper laser level lifetime has been educed to 183 us. Also the results of generation investigations obtained in a laser system with the examined YAG:Nd active media in form of side pumped "slabs" and inform of longitudinally pumped rod.

4

Oxide crystals for solid state laser applications

Łukasiewicz T., Majchrowski A., Mierczyk Z.

Opto-Electronics Review

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2001

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Vol. 9, No. 1

49-56

EN

Recent trends in optoelectronics are towards small solid state lasers pumped by laser diodes. The paper describes efforts to create material basis for the development of this branch of optoelectronics. Single crystal growth and properties of many compounds acting as active laser or self-frequency doubling materials, passive modulators, nonlinear optical materials, and acousto-optic materials are discussed, including aluminium garnet with high neodymium concentration, vanadates, borates, and double tungstates.