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Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

Ściana B., Zborowska-Lindert I., Pucicki D., Boratyński B., Radziewicz D., Tłaczała M., Serafińczuk J., Poloczek P., Sęk G., Misiewicz J.

Opto-Electronics Review

2008

Vol. 16, No. 1

1-7

The nitrogen-containing AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N, have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNxGaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated.

Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

Pucicki D., Zborowska-Lindert I., Ściana B., Radziewicz D., Boratyński B.

Optica Applicata

2007

Vol. 37, nr 4

415-421

Double quantum well (DQW) (In,Ga)(As,N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As,N) (structure #DP02) or 4 nm (In,Ga)(As,N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 žA.