Optimization of the thickness, kind of dopant, and doping level of (Cd,Hg)Te photosensitive elements is performed to construct magnetoexclusion (EMCD - magnetoconcentration) detectors for 10.6 - [mi]cm radiation. It is proved that construction of EMCD detectors operating at elevated temperatures (T=250K) requires a weakly doped n-type material, whereas of those operating at room temperature (T=300K) - a p-type material of doping comparable to the intrinsic concentration. With an increase in the operating temperature of detectors, thinner and thinner photosensitive elements are required. High detectivities of EMCD detectors within far infrared are obtained at high bias voltages. Further improvement in detection parameters of magnetoexclusion detectors is possible by the application of optical immersion.
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