Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: delta doping

Sortuj według:

Ogranicz wyniki do:

Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer

Motyka M., Sęk G., Andrzejewski J., Kudrawiec R., Misiewicz J., Ściana B., Radziewicz D., Tłaczała M.

Optica Applicata

2005

Vol. 35, nr 3

471-477

In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spectra. Obtained results have been compared with theoretical calculations preformed in the framework of the effective mass approximation. In order to accurately find the wavefunctions of electrons and holes confined in the quantum well embedded in the built-in electric field, the time-dependent Schrodinger equation has been solved.

Planarne domieszkowanie krzemem naprężonych studni kwantowych InxGa1-xAs/GaAs w technice MOVPE

Ściana B., Radziewicz D., Paszkiewicz B., Tłaczała M., Sitarek P., Kudrawiec R., Misiewicz J., Kováč J., Florovič M.

Elektronika : konstrukcje, technologie, zastosowania

2005

Vol. 46, nr 2-3

14-15

Przedstawiono wyniki badań, dotyczące procesów planarnego domieszkowania krzemem naprężonych, pojedynczych studni kwantowych InxGa1-xAs/GaAs w technice MOVPE. Badano wpływ parametrów procesu domieszkowania oraz szerokości studni kwantowej na rozkład domieszki krzemowej. Wprowadzenie domieszki typu delta do studni kwantowej w znaczący sposób zwiększa jej przestrzenne ograniczenie. Ponadto powoduje silną modyfikację przejść optycznych i wzmocniony efekt Starka.

This work presents the studies of Si-δ-doped InxGa1-x As/GaAs strained quantum well obtained by MOVPE technology. The influence of the growth parameters and quantum well width on silicon dopant distribution was investigated. It was shown that introducing delta layer into quantum well gives better carrier confinement. In addition, the PR and PC spectra of Si-δ-doped InxGa1-x As/GaAs SQW confirmed significant modification of the optical transitions and enhanced QCSE.

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

Boratyński B., Korbutowicz B., Paszkiewicz B., Paszkiewicz R., Pucicki D., Radziewicz D., Ściana B., Tłaczała M.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2004

Vol. 52, nr 4

291-299

In this work studies of MOVPE growth of InAlGaAs/ AlGaAs/GaAs heterostructures are presented. The HRXRD and SIMS measurements indicate the high structural and optical properties as well as high uniformity of thickness and composition of InAlGaAs quantum wells. This work is the first step towards elaboration of the technology of the strained InAlGaAs/GaAs heterostructures for advanced optoelectronic devices working in the visible part of the spectrum. The investigations of Si (n-type), Zn (p-type) b-doped GaAs epilayers and centre Si-b-doped InxGa1-xAs single quantum well (SQW) are presented. The b-doping layer was formed by SiH4 or DEZn introduction during the growth interruption. The electrical and optical properties of the obtained structures were examined using C-V measurement, EC-V electrochemical profiler, Raman spectroscopy (RS), photoreflectance (PR) and photocurrent (PC) spectroscopies. Technology of thick GaN layers grown on sapphire by HVPE is very promising as a part of freestanding GaN substrates manufacturing. Further works will be focused on the optimisation of growth, separating layers from substrates and surface polishing. The influence of the growth parameters on the properties of (Ga, Al)N/ Al2O3 and Mg dopant incorporation was studied.