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1 2003

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Photoluminescence study of ZnO/CdS/Cu(In,Ga)Se2 solar cells

Bacewicz R., Żuk P., Trykozko R.

Opto-Electronics Review

2003

Vol. 11, No. 4

277-280

Photoluminescence (PL) of the absorber layer of ZnO/CdS/Cu(In,Ga)Se2 solar cells has been studied. Baseline process solar cells as well as structures subject to a damp heat treatment and sodium - free structures have been investigated. The excitation intensity and temperature dependence of the photoluminescence spectra have been measured. A large blue shift of the photoluminescence bands for increasing excitation intensity has been observed with a per decade shift value ranging from 10 meV for baseline cells to 35 meV for Na free cells. This is characteristic behaviour for spectral bands due to transitions involving random potential fluctuations in highly compensated In-rich near-interface layer of the Cu(In,Ga)Se2 film. The temperature evolution of the spectra indicates two types of PL transitions: the tail-impurity and band-impurity transitions. The change of the PL spectra upon the damp heat treatment is discussed.