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The influence of stack position and acoustic frequency on the performance of thermoacoustic refrigerator with the standing wave

Kajurek J., Rusowicz A., Grzebielec A.

Archives of Thermodynamics

2017

Vol. 38, no. 4

89–-107

Thermoacoustic refrigerator uses acoustic power to transport heat from a low-temperature source to a high-temperature source. The increasing interest in thermoacoustic technology is caused due to its simplicity, reliability as well as application of environmentally friendly working fluids. A typical thermoacoustic refrigerator consists of a resonator, a stack of parallel plates, two heat exchangers and a source of acoustic wave. The article presents the influence of the stack position in the resonance tube and the acoustic frequency on the performance of thermoacoustic refrigerator with a standing wave driven by a loudspeaker, which is measured in terms of the temperature difference between the stack edges. The results from experiments, conducted for the stack with the plate spacing 0.3 mm and the length 50 mm, acoustic frequencies varying between 100 and 400 Hz and air as a working fluid are consistent with the theory presented in this paper. The experiments confirmed that the temperature difference for the stack with determined plate spacing depends on the acoustic frequency and the stack position. The maximum values were achieved for resonance frequencies and the stack position between the pressure and velocity node.

Audio frequency glow discharge - new prospects for deposition of thin films of plasma glasses from organic precursors

Tyczkowski J.

Polish Journal of Applied Chemistry

1998

Vol. 42, nr 2

135-141

A new type of reactor for plasma chemical vapour deposition from organic precursors, activated by audio frequency, is presented. It was found that ion bombardment process and plasma chemical processes are completely separated in the system and they can be idenpendently controlled. This feature makes it possible to produce two types of twin films, namely amorphous insulators (a-I) and amorphous semiconductors (a-S), using the same original compound and a continuous deposition process. The type of deposited material can be selected by only small changes of a coupling capacitance in the system. It seems that the reactor offers new possibilities for thin film technology consisting in preparation of novel class of layer structures formed from twin films of a-I and a-S.