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The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs

Emam M., Houri S., Vanhoenacker-Janvier D., Raskin J.-P.

Journal of Telecommunications and Information Technology

2009

nr 4

18-24

This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezoresistance coefficientis shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.