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1

Thin films of copper phthalocyanine deposited by solution processing methods

Gojzewski Hubert, Ghani Fatemeh, Szybowicz Mirosław

Materials Science Poland

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2020

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Vol. 38, No. 1

79--90

EN

In this work, we show and discuss the surface structure picture of copper phthalocyanine (CuPc) thin films deposited from trifluoroacetic acid (TFA) solvent onto silicon substrates at ambient conditions by four solution processing methods, namely drop-casting, dip-coating, spin-casting and spray-coating. The CuPc films were studied by AFM, as the main technique, and complemented by micro-Raman spectroscopy. Essentially, such thin films consist of CuPc molecular nanoribbons of a fixed ~1 nm thickness. CuPc molecules are arranged in an in-plane direction and formed in stacks under a defined tilt angle with respect to the substrate surface (monolayer) or underlying CuPc layer (multilayer). The film morphology takes various forms depending on the solution concentration, number of layers, and the deposition method. For instance, the morphology varies from very wide (~600 nm) but flat (~1 nm) ribbons for films prepared by dip-coating to crystallized rod-like features (multi-layered ribbons) when obtained by spray-coating. The factors studied in this paper should be taken into consideration in designing and controlling the criteria for rigorous CuPc film architecture.

2

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Skonieczny R., Popielarski P., Bała W., Fabisiak K., Paprocki K., Jancelewicz M., Kowalska M., Szybowicz M.

Materials Science Poland

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2016

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Vol. 34, No. 3

676--683

EN

The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

3

Efficiency of chemometric methodology for characterization of In/CuPc films on HOPG and InSb based on ultraviolet photoelectron spectra

Balcerowska-Czerniak G., Dittmar-Wituski A., Hiller T., Bukaluk A.

Inżynieria Materiałowa

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2016

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Vol. 37, nr 5

233--239

EN

Photoemission spectroscopy offers the possibility to study on the interface formation of copper phthalocyanine exposed to indium. In this paper, we demonstrate the potential of using chemometric treatment in the characterization of In/CuPc films on HOPG and InSb substrates based on ultraviolet photoelectron spectra (UPS). The main advantage of using chemometric methods is that there is no need to construct of line intensities models to gain valuable information. The experimental data sets have a bilinear mathematical structure and, therefore, they can be subjected to principal component analysis (PCA). The results of PCA showed that the principal component loadings provide useful information about the changes in the line intensities and the peak positions. The obtained graphical models of data, in a simple way, enabled the determination of new supplementary information concerning the role of the individual chemical compounds in terms of In/CuPc interface formation. Moreover, chemometric classification method such as cluster analysis (CA) allowed identifying the subgroups of samples according to a specific property of formed components.

PL

W układach z metalami ftalocyjanina miedzi (CuPc) stanowi ciekawy materiał organiczny wykazujący właściwości półprzewodnikowe, dzięki czemu stała się materiałem szeroko wykorzystywanym w technologii przyrządów elektronicznych oraz optoelektronicznych. Układy typu metal/CuPc na różnych podłożach są opisywane w literaturze, ale jak się okazuje wyniki nie są spójne i jednoznaczne. Celem pracy jest wykazanie przydatności metod chemometrycznych w analizie dwóch układów: In/CuPc/InSb oraz In/CuPc/grafit na podstawie widm otrzymanych metodą spektroskopii fotoelektronów wzbudzanych promieniowaniem nadfioletowym (UPS).

4

The fabrication and optical detection of a vertical structure organic thin film transistor

Zhang H., Wang D., Jia P.

Opto-Electronics Review

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2014

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Vol. 22, No. 1

41-44

EN

Using vacuum evaporation and sputtering process, we prepared a photoelectric transistor with the vertical structure of Cu/copper phthalocyanine (CuPc)/Al/copper phthalocyanine (CuPc)/ITO. The material of CuPc semiconductor has good photosensitive properties. Excitons will be generated after the optical signal irradiation in semiconductor material, and then transformed into photocurrent under the built-in electric field formed by the Schottky contact, as the organic transistor drive current makes the output current enlarged. The results show that the I–V characteristics of transistor are unsaturated. When device was irradiated by full band (white) light, its working current significantly increased. In full band white light, when Vec = 3 V, the ratio of light and no light current was ranged for 2.9–6.4 times. Device in the absence of light current amplification coefficient is 16.5, and white light amplification coefficient is 98.65.

5

XPS study of air exposed copper phthalocyanine ultra-thin films deposited on Si(111) native substrates

Krzywiecki M., Grządziel L., Ottaviano L., Parisse P., Santucci S., Szuber J.

Materials Science Poland

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2008

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Vol. 26, No. 2

287--294

EN

Results are presented of XPS characterization of ultra-thin copper phthalocyanine (CuPc) (16 nm- QCM controlled) films thermally deposited under UHV conditions on p- and n- type Si(111) substrates covered by native oxide. Our attempt has been focused on comparative studies of thin films in terms of the stability and durability of CuPc layers after one year of aging in ambient atmosphere. The impact of the type of the substrate doping was also explored. Our results clearly prove that CuPc layers are chemically stable and durable after one year exposure to air. We also demonstrate the existence of the substrate doping impact on the CuPc ultra-thin film what might be caused by dipole effects.

6

The electronic structure of the near surface region of iron(II) and copper(II) phthalocyanine thin films - a comparative experimental and theoretical study

Białek B.

Prace Naukowe. Chemia / Wyższa Szkoła Pedagogiczna w Częstochowie

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1999

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Vol. 4

179--184

EN

The results of the electronic structure of near surface region of iron(II) and copper (II) phthalocyanine thin films carried out with both Photoemission Yield Spectroscopy (PYS) technique and ab initio calculation method are presented. A comparative analysis of the experimental and theoretical results is given. It is shown that the experimental values for the ionization potentials and work functions of the investigated materials may be compared with the calculated third and second occupied molecular energy levels, respectively.

PL

W pracy przedstawiono rezultaty badań struktury elektronowej obszaru powierzchniowego cienkich warstw ftalocyjanin żelaza(II) i miedzi(II) prowadzonych metodą spektroskopii wydajności kwantowej fotoemisji (PYS) i metodą obliczeniową ab initio. Przeprowadzono analizę porównawczą wyników doświadczalnych i teoretycznych. Stwierdzono, że wyznaczone drogą eksperymentalną wartości potencjału jonizacji wyjścia badanych materiałów odpowiadają obliczonym wartościom energii odpowiednio trzeciego i drugiego obsadzonego poziomu molekularnego.