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Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Misiewicz J., Kudrawiec R.

Opto-Electronics Review

2012

Vol. 20, No. 2

101-119

The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photoreflectance spectra, have been presented and discussed for selected QW and QD structures.

Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer

Motyka M., Sęk G., Andrzejewski J., Kudrawiec R., Misiewicz J., Ściana B., Radziewicz D., Tłaczała M.

Optica Applicata

2005

Vol. 35, nr 3

471-477

In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spectra. Obtained results have been compared with theoretical calculations preformed in the framework of the effective mass approximation. In order to accurately find the wavefunctions of electrons and holes confined in the quantum well embedded in the built-in electric field, the time-dependent Schrodinger equation has been solved.