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1 Prace Naukowe. Chemia i Ochrona Środowiska / Akademia im. Jana Długosza w Częstochowie

1 2005

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Cooling-stimulated rebuilding process in CdS

Pavlyk B., Tsybulyak B.

Prace Naukowe. Chemia i Ochrona Środowiska / Akademia im. Jana Długosza w Częstochowie

2005

Vol. 10

5--12

Most processes of defect structure rearrangement in semiconductors due to influence of external factors have thermoactivation nature. The others can be related to athermic processes. However, some effects (conductivity layer formation and electron emission from surface) on the basic faces of CdS single crystals were found under cooling process. These effects can not be explain by present theories. Our researches of dependence between the electron emission intensity with (0001)-face CdS crystals and the influence of external factors (external electric field directed along to surface, temperature of previous annealing) enabled to propose a mechanism of process conductive layer formation. It consists in rebuilding as minimum two metastable defects with different activation energies of electron desorption into vacuum.