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1 2001

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Determination of the surface state density distribution and fermi level position on the InP (100) surface from excitation-power-dependent photoluminescence efficiency spectra

Adamowicz B., Miczek M., Domagała T., Hasegawa H.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

76-78

The energy distribution of the surface state density NSS(E) on the chemically polished n-type InP (100) surface was determined from a rigorous computer analysis of the band-to-band photoluminescence efficiency (ϒ PL) versus excitation light intensity (θ). We obtained a very good modelling of the experimental ϒ PL-θ spectrum, taken from the literature, which exhibited a strong increase of ϒ PL. The theoretical values of ϒ PL were calculated using a numerical simulator taking account of all possible recombination processes in a bulk and via surface states. Due to an optimised fitting realised by means of a novel fully-computer procedure based on Genetic Algorithm, we determined the U-shaped NSS(E) distribution as well as the values of surface state cross sections for capturing electrons (σn) and holes (σp). In addition, we analysed the behaviour of the quasi-Fermi levels (EFn, EFp) on the surface and profiles of the radiative recombination velocity (Urad) under increasing excitation intensity.