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1 2023

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InAs/InAsSb superlattice infrared detectors

Ting David Z., Soibel Alexander, Khoshakhlagh Arezou, Keo Sam A., Rafol Sir B., Fisher Anita M., Hill Cory J., Pepper Brian J., Maruyama Yuki, Gunapala Sarath D.

Opto-Electronics Review

2023

Vol. 31, Special Issue

art. no. e144565

Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type- II strained layer superlattice absorbers have achieved excellent performance. In the long and very long wavelength infrared, however, n-type InAs/InAsSb type-II strained layer superlattice detectors are limited by their relatively small absorption coefficients and short growth-direction hole diffusion lengths, and consequently have only been able to achieve modest level of quantum efficiency. The authors present an overview of their progress in exploring complementary barrier infrared detectors that contain p-type InAs/InAsSb type-II strained layer superlattice absorbers for quantum efficiency enhancement. The authors describe some representative results, and also provide additional references for more indepth discussions. Results on InAs/InAsSb type-II strained layer superlattice focal plane arrays for potential NASA applications are also briefly discussed.