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1
Content available remote Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
EN
Cerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visible region under the ultraviolet excitation with a wavelength of 325 nm. The photoluminescence emission peaks were obtained at 540 nm, 560 nm and 570 nm for CdZnS, CdZnS:Ce and (CdZnS:Ce)Sn thin films, respectively having different concentrations of Sn. It has been observed that the photoluminescence emission peak shifted to higher wavelength region with an increase in intensity by Ce doping and Ce-Sn co-doping. Further enhancement in luminescence peak intensity has been observed by increasing concentration of Sn in (CdZnS:Ce)Sn films. Average crystallite size, measured from XRD data, was found to be increased with increasing concentration of Sn. An increase in the concentration of Sn shifted the UV-Vis absorption edge toward the higher wavelength side. Energy band gap for undoped CdZnS and Ce-Sn co-doped CdZnS varied from 2.608 eV to 2.405 eV. The SEM micrographs of CdZnS and (CdZnS:Ce)Sn films showed the leafy-like and ball-like structures. The presence of Sn and Ce was confirmed by EDAX analysis.
EN
Cadmium oxide (CdO) thin films were synthesized using chemical bath deposition (CBD) method from aqueous cadmium nitrate solution. The bath temperatures were maintained at room temperature (25 °C) and at higher temperature (80 °C). The structural studies revealed that the films showed mixed phases of CdO and Cd(OH)2 with hexagonal/monoclinic crystal structure. Annealing treatment removed the hydroxide phase and the films converted into pure CdO with cubic, face centered crystal structure. SEM micrographs of as-deposited films revealed nanowire-like morphology for room temperature deposited films while nanorod-like morphology for high temperature deposited films. However, cube-like morphology was observed after air annealing. Elemental composition was confirmed by EDAX analysis. Band gap energies of the as-deposited films varied over the range of 3 eV to 3.5 eV, whereas the annealed films showed band gap energy variation in the range of 2.2 eV to 2.4 eV. The annealed films were successfully investigated for NH3 sensing at different operating temperatures and at different gas concentrations. The room temperature synthesized film showed a response of 17.3 %, whereas high temperature synthesized film showed a response of 13.5 % at 623 K upon exposure to 24 ppm of NH3.
EN
In this report, ternary semiconducting NixBi2−xS3(x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of NixBi2−xS3 films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni2+ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of NixBi2−xS3 formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap Eg of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.
4
EN
Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs) prepared by chemical bath deposition (CBD) at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm) becomes larger than that of undoped Sb2S3 TF (69.3 nm). It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE) and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.
EN
Cadmium oxide (CdO) thin films were grown on glass substrates by chemical bath deposition (CBD) method for different deposition times using cadmium acetate as cationic precursor. The structural and optical characterization was carried out using XRD, TEM, and UV-Vis spectrophotometer measurements. Structural analyses with XRD confirmed cubic structure of the CdO. Average particle size estimated from Rietveld refinement method of XRD pattern corresponded well with TEM measurement. The optical band gap varied between 2.35 eV to 2.48 eV with deposition time and an increase in optical band gap with decreasing film thickness was observed. The AC electrical conduction behavior of the CdO film was investigated as a function of temperature as well as frequency. The conductivity measurements indicated localized conduction and hopping of carriers between localized states. The value of real part of dielectric constant was found to decrease with frequency and increase with temperature. The Nyquist plots at different temperatures showed the existence of both grains and grain boundaries contributing to conduction mechanism.
PL
Cienkowarstwowe ogniwa fotowoltaiczne wykonane na bazie struktury CIGS (mieszaniny pierwiastków miedzi, indu, galu oraz selenu) należą do II generacji ogniw fotowoltaicznych. Wykazują one efektywność na poziomie zbliżonym do ogniw I generacji, lecz ze względu na niższe zużycie materiału, coraz częściej wypierają z rynku ogniwa krzemowe Artykuł przedstawia rezultaty badań dotyczących sposobu otrzymywania warstwy buforowej CdS (siarczku kadmu), zastosowanej w cienkowarstwowych ogniwach fotowoltaicznych typu CIGS. Przyjęto dwa rozwiązania technologii nanoszenia: warstwa okna CdS uzyskana metodą rozpylenia magnetronowego oraz warstwa okna CdS uzyskana metodą kąpieli chemicznej (CBD– Chemical Bath Deposition). Struktura ta powinna posiadać odpowiednią wielkość przerwy energetycznej, która pozwali na większą absorpcję fotonów, a także wymaga się, aby była cienka (mniej niż 100 nm) i jednolita. Warstwy CdS zostały nałożone przez osadzanie w kąpieli chemicznej CBD na szklanych podłożach pokrytych Mo/CIGS (naniesione warstwy metodą sputteringu magnetronowego). Uzyskano dzięki temu warstwę emitera o grubości 80 nm po czasie osadzania 35 minut. Dla porównania warstwy CdS zostały nałożone poprzez sputtering magnetronowy na podłożu Mo/CIGS, uzyskanym tą samą metodą. Następnie oba rozwiązania zostały przebadane pod względem morfologii powierzchni na elektronowym mikroskopie skaningowym, jak również przeprowadzono analizy składu pierwiastkowego warstw. Zarówno jedna, jak i druga metoda prowadzi do otrzymania warstwy emitera CdS dla zastosowań w ogniwach CIGS.
EN
Thin-film photovoltaic cells created based on the structure of CIGS (a mixture of the elements copper, indium, gallium and selenium) belong to the second generation of photovoltaic cells. They show the effectiveness of a level similar to the cells of the first generation, but due to lower material consumption, they increasingly forcing out silicon solar cells. The article presents the results of research of the method for obtaining a CdS buffer layer, used in thin-film CIGS photovoltaic cells. Two technology solutions of application were adopted: layer of CdS window obtained by the magnetron sputtering and layer of CdS obtained by chemical method (CBD- Chemical Bath Deposition). CdS layer has been imposed by the deposition in the chemical bath on glass substrates covered with Mo/CIGS (layers applied by magnetron sputtering). Allowing an emitter layer having a thickness of 80 cm after 35 minutes of deposition time. For comparison, a CdS layer was applied by magnetron sputtering on the substrate Mo/CIGS obtained by the same method. Subsequently, both solutions were examined in the SEM microscope to check the surface morphology, and also to analysis the elemental composition of the layers. Both methods leads to receive CdS emitter layer for use in CIGS cells.
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Content available remote Effect of TEA on characteristics of CdS/PbS thin film solar cells prepared by CBD
EN
In this study, a solar cell with a glass/ITO/CdS/PbS/Al structure was constructed. Both window (CdS) and absorption (PbS) layers were deposited by chemical bath deposition (CBD) method. The CdS window layer was deposited on ITO-glass. The PbS nanocrystalline thin film was prepared with and without triethanolamine on CdS films at bath temperature of 25 °C. CdS and PbS nanocrystals were identified using XRD and SEM. The cells are photosensitive in a large spectral range (at visible and near infrared regions). The cell with absorbing layer obtained from the bath without TEA has higher efficiency with the following parameters: the open circuit voltage (Voc) is 275 mV, short circuit current (J sc) is 12.24 mA/cm 2, maximum voltage (V max) is 165 mV and maximum current (J max) is 7.11 mA/cm 2with the efficiency η = 1.31 %, fill factor FF is 32 % under the illumination intensity of 90 mW/cm2. The cells have an area of 0.15 cm 2.
EN
Manganese dioxide (MnO2) films with different nanostructures were deposited on indium tin oxide (ITO) glasses by using chemical bath deposition (CBD). Deposition temperature and time were varied from 60 °C to 90 °C and from 2 h to 72 h, respectively. The samples have been characterized using an X-ray diffraction (XRD), field emission scanning electron microscope (SEM) and an electrochemical workstation. The films deposited at 60 °C for 8 h showed that obtained nanoflowers had an amorphous nature, while those deposited at higher temperatures of 70, 80 and 90 °C showed a well-developed nanowire and nanorod morphology. However, those which were deposited at 60 °C, showed the best electrochemical properties, including a higher specific capacitance, good rate of performance and a cycling stability (93 % loss of the initial value after 10,000 cycles).
EN
Polycrystalline Cadmium sulfide (CdS) films were deposited onto Corning glass substrates from alkaline solutions containing CdCl2, KOH, Na3C6H5O7 and CS(NH2)2 at different deposition times (10, 20, 30, 40 and 50 min), bath temperatures (80 ±2 °C) and different concentration of the reactants. A comparative study was performed out on thin film via optical transmission and X-ray diffraction (XRD) measurements. The results which reveal that the deposition time has a profound influence on the growth rate and band gap of the deposited layers. Diffraction data was used to evaluate the lattice parameter, grain size, average strain, number of crystallites per unit area and dislocation density in the film are calculated.
EN
Nanocrystalline thin films of cadmium sulphide were prepared by chemical bath deposition technique onto glass substrate at 60 °C. The deposition parameters were optimized to obtain good quality of nanocrystalline thin films such as, time, precursor concentration, temperature of deposition and pH of the solution. The studies on crystal structure, composition, surface morphology, electrical conductivity and photoconductivity of the films were carried out by using different analytical technique. Characterization includes X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Energy dispersive X-ray analysis (EDAX), Electrical and photoconductivity. The response and recovery time of the thin film were measured and presented.
EN
The paper presents a study regarding the kinetic of chemical bath deposition (CBD) PbS nano films. Nano films were deposited from chemical bath containing thiourea, lead nitrite, and ammonia. The deposition kinematics and optical investigations have been performed to compare the properties of the films grown with different precursor solutions. We are able to determine the growth rate as a function of the synthesis conditions and it was found that the growth rate of deposited nano layer affected significantly by synthesis conditions. The main characteristic of nano films is the band gap. This parameter determined from spectroscopy Measurements of transmission, in the energy range of 240-840 nm is influenced by many factors such as deposition time, bath temperature, pH value of the path and molar concentration of the reactants.
EN
Polycrystalline Cadmium sulfide (CdS) films were deposited onto Corning glass substrates from alkaline solutions containing CdCl2, KOH, Na3C6H5O7 and CS(NH2)2 at different deposition times (10, 20, 30, 40 and 50 min), different bath temperatures and different concentration of the reactants. A comparative study was performed out on thin film via optical transmission and X-ray diffraction (XRD) measurements which reveal that the deposition time has a profound influence on the growth rate and band gap of the deposited layers. Diffraction data are used to evaluate the lattice parameter, grain size, average strain, number of crystallites per unit area and dislocation density in the film are calculated.
13
Content available remote Chemical bath deposition and characterization of nanocrystalline ZnO thin films
EN
The subject of this paper is the wet chemical synthesis and characterization of nanocrystalline ZnO thin films. ZnO thin film was deposited on a zinc plate using a chemical bath of zinc acetate (Zn(O2CCH3)2) and ethylenediamine (C2N2H8) at various temperatures. Different substrates were used and their effect on the chemical bath deposition of ZnO were investigated. The effect of pH levels and temperature on the crystalline quality and morphology of the ZnO film are also presented.
EN
The paper describes the deposition method with which the zinc oxide nanostructures were obtained. Electric field enhanced CBD enables the production of the ZnO thin layer in a shorter time and with lager adhesion in comparison to the classical CBD. Moreover, the electrical field allows for ZnO nanostructure manipulation, which changes the physical properties of the material. The shape manipulation makes possible the creation of a structure with big surface to volume ratio, which was the goal of our research. The materials with large active surfaces have a range of applications in gas sensors. The larger the surface of the active material, the faster the response times of the sensor and the smaller the Iow detection level.
PL
Artykuł zawiera opis metody otrzymywania nanostruktur tlenku cynku z kąpieli chemicznej CBD (ang. Chemical Bath Deposition). Metoda ta umożliwia wytwarzanie cienkich warstw ZnO o silnie rozwiniętej powierzchni. Tradycyjny sposób osadzania metodą CBD można przyśpieszyć prowadząc proces w polu elektrycznym. Ponadto, w takich warunkach można manipulować kształtem otrzymanych struktur, a tworzące się warstwy tlenku cynku charakteryzują się lepszą adhezją do podłoża. Dobierając parametry procesu, autorzy otrzymali struktury o zmiennej średnicy.
15
Content available remote Synthesis of Zn2TiO4 and ZnTiO3 nanocomposites by the CBD method
EN
Zn2TiO4/ZnTiO3 nanopowders were synthesized via CBD method. TiCl4, ZnCl2 and NaOH were used as precursors. The effect of temperature was investigated on morphologies and compositions of final product. The calcinations of the samples were carried out at 630 oC. The structures and morphologies of the products were studied by X-ray diffraction and scanning electron microscopy. The results show that the best temperature for fabrication of the compounds without ZnO is 25 oC.
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