Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: centra aktywne optycznie

Sortuj według:

Ogranicz wyniki do:

Domieszkowane warstwy szkliw plazmowych : nowa klasa materiałów dla elektroniki

Tyczkowski J.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

14-17

The paper contains information on the preparation and properties of thin films of amorphous semiconductors doped with electrical and optical centers. The discussed films are fabricated by plasma enhanced chemical vapor co-deposition methods. The main attention is focused on doping with elements of groups III, IV, V and lanthanides. It is shown that the electronic structure of the films can be modified by dopants as a result of both doping and alloying effects. Examples of changes in the type and value of conductivity a and the optical gap EOPT in relation to dopant type and its concentration are presented. In the case of the optical centers, one of the most recently interesting problem - namely the plasma polymers doped with lanthanide atoms - is touched. Finally, a brief survey of the most important applications of doped plasma-deposited amorphous semiconductors is given.