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EN
Gamma titanium aluminides are fast developing materials and particularly in use for aerospace and automotive components. Due to the high cutting forces and raised cutting temperatures achieved during milling of this material, tool-wear is a crucial factor. Thus, increasing of the cutting speed leads to a significant rise of the cutting temperature. On the one hand, the implementation of innovative cooling strategies can reduce the heat flux in the cutting tool. On the other hand, analysing of the heat generation during the cutting process can lead to improved machining strategies. Previous research attempts assess microstructural and chip formation, as well as tool-wear in finish milling of this material. However, few have investigated the optimal cutting strategies in roughing and finishing of titanium aluminides. In this study, the milling operation under high feed rate should be investigated and the potential to improve chip removal rate and tool life should be determined.
EN
The work presents the results of tool life tests of uncoated cemented carbide cutting tools as well as tools coated with Al2O3-C and Al2O3-C/Al2O3 composite layer synthesized by MOCVD method using Al(acac)3. Al2O3-C layers were deposited in argon. The composite layer was synthesized in argon initially in order to obtain thin and continuous Al2O3-C layer about 70 nm thick and outer, thicker pure Al2O3 layer deposited in air. The layers were deposited at 800 °C. Same samples were additionally annealed or synthesized at 1000 °C. The most advantageous results were obtained when the layers were annealed. This way enables controlling the grain size in the layer. In the work, comparative tool life tests were also performed for commercial cemented carbide cutting tools without and with Ti(C, N) + Al2O3 layers from Sandvik Baildonit.
EN
Deposition of high purity Al2O3 layers on cemented carbide cutting tools with no intermediate layer of TiC using alumina acetyloacetonate Al(O2C5H7)3 as precursor was investigated. Pure ammonia (NH3) and argon (Ar) were used as carrier gases. Carbon (solid by-product of Al(acac)3 pyrolisis) was eliminated by introduction of air - source of oxygen - into the CVD reactor. Al2O3 layers were synthesized in the temperature range of 800-1100 degrees centigrade at their growth rate of even 5 micrometers/h. The layers synthesized at 800 degrees centigrade were holding at a temperature of 900-1100 degrees centigrade, what caused their crystallization. The layers obtained were smooth and well adhered to the substrate.
PL
W pracy prowadzono badania nad syntezą czystych warstw Al2O3 na narzędziach skrawających z węglików spiekanych, nie pokrywanych uprzednio pośrednią warstwą TiC, z użyciem acetyloacetonianu glinu AL(O2C5H7)3. Jako gazy nośne stosowano czysty amoniak (NH3) i argon (Ar). Węgiel (produkt pyrolizy Al(acac)3) eliminowano przez wprowadzenie powietrza - źródła tlenu - do reaktora CVD. Warstwy Al2O3 osadzano w zakresie temperatur 800-1100 stopni Celsjusza. Szybkość wzrostu tych warstw wynosiła nawet 5 mikrometrów/h. Warstwy syntezowane w 800 stopni Celsjusza wygrzewano dodatkowo w temperaturach 900-1100 stopni Celsjusza, co powodowało ich krystalizację. Otrzymane warstwy były gładkie i dobrze przyczepne do podłoża.
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