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1

Analysis of Substrate Integrated Waveguide (SIW) Resonator and Design of Miniaturized SIW Bandpass Filter

Rhbanou A., Bri S., Sabbane M.

International Journal of Electronics and Telecommunications

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2017

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Vol. 63, No. 3

255--260

EN

In this paper, the substrate integrated waveguide (SIW) resonator is designed to study the influence of dielectric materials on its operating parameters (insertion loss, fractional bandwidth and unloaded Q-factor). The results obtained show that the use of high permittivity substrate in the SIW resonator by increasing its thickness allows reducing the size of resonator by causing the increase in its unloaded Q-factor. A SIW bandpass filter is designed using low temperature co-fired ceramic (LTCC) technology and high permittivity substrate. The filter has a fractional bandwidth of 27 % centered at 14.32 GHz with insertion loss of 0.7 dB.

2

Resonant cavity enhanced photonic devices.

Bugajski M., Muszalski J., Mroziewicz B., Regiński K., Ochalski T.J.

Optica Applicata

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2001

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Vol. 31, nr 2

273-288

EN

We review our recent works on technology, basic physics and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In/sub x/Ga/sub 1-x/As/GaAs planar microcavities with DBR reflectors. The room temperature emission in lambda -sized cavities is enhanced in comparison with its free space value, while in lambda /2-sized cavities suppression of spontaneous emission is observed. The characteristics of spontaneous emission in microcavities depend on the wavelength difference between the emitter and the cavity resonance. It has been shown that ideal tuning of the cavity can be achieved by adjusting sample temperature. In general, observed trends are in agreement with theoretical predictions. These changes to the spontaneous emission process directly affect vertical-cavity laser (VCSEL) properties. An increased coupling efficiency of spontaneous emission into the lasing mode is observed in VCSELs with lambda -sized cavities. We demonstrate the operation of resonant-cavity light emitting diodes (RC LED) and optically pumped VCSELs developed recently at the Department of Physics and Technology of Low Dimensional Structures of the Institute of Electron Technology. The epitaxial growth issues, fabrication technology and basic characteristics of these devices are discussed

3

Precise measurement of complex permittivity of materials for telecommunications devices

Nakamura T., Nikawa Y.

Journal of Telecommunications and Information Technology

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2001

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nr 3

66-71

EN

In order to obtain precise complex permittivity of the dielectric materials obtained from the perturbation method a correction curve is made using the electromagnetic field simulator which applies transmission line modeling (TLM) method. In this experiment, generated microwave power with the frequency of 2.45 GHz is applied to heat dielectric material while measuring temperature dependence of complex permittivity of dielectric material. To obtain these objectives cavity resonator with cooling system is designed. It is found from the result that the accurate temperature dependence of complex permittivity of the materials can be obtained by the method presented here.