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Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

An Y. P., Wang Y. D., Cao F.

Optica Applicata

2010

Vol. 40, nr 1

249--254

Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si3N4 and SiO2 as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.

Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer

Motyka M., Sęk G., Andrzejewski J., Kudrawiec R., Misiewicz J., Ściana B., Radziewicz D., Tłaczała M.

Optica Applicata

2005

Vol. 35, nr 3

471-477

In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spectra. Obtained results have been compared with theoretical calculations preformed in the framework of the effective mass approximation. In order to accurately find the wavefunctions of electrons and holes confined in the quantum well embedded in the built-in electric field, the time-dependent Schrodinger equation has been solved.

Optical characterisation of strained-layer In/sub x/Ga/sub 1-x/As/GaAs MQW LED grown by MOVPE.

Sęk G., Ciorga M., Bryja L., Misiewicz J., Radziewicz D., Ściana B., Tłaczała M.

Optica Applicata

2000

Vol. 30, nr 1

183-188

We present the use of photoreflectance (PR) spectroscopy combined with the standard photoluminescence (PL) and electroluminescence (EL) for the room temperature optical investigation of strained-layer multiple quantum well (MQW) In/sub x/Ga/sub 1-x/As/GaAs light emitting diode (LED) for 1040 nm. In the PR spectra, except the fundamental transition observed also in the emission spectra, two extra features related to the active region of the device have been seen. The presence of these two excited state transitions allowed the band structure to be analysed and the correctness of the device performance to be checked. We repeated the measurements after the top p-doped GaAs cladding layer had been etched off and discussed the changes of the built-in electric field.