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Chemical solution-derived SrMg2(PO4)2:Eu2+ blue phosphor for ultraviolet emitting diodes

Hwang K. S., Hwangbo S., Kim J. T.

Optica Applicata

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2010

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Vol. 40, nr 4

943--948

EN

Eu2+-doped SrMg2(PO4)2 phosphor with blue emission was prepared by the low temperature chemical solution process using inorganic salts as a starting material. Transparent sol was preheated at 300 °C for 120 min and then precursor was finally annealed at 900 °C for 240 min in a reducing CO atmosphere. Crystallinity, surface morphology and luminescent properties have been investigated. The phosphor emits bright blue luminescence with a peak wavelength at 423 nm under near-ultraviolet excitation at 363 nm.

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Wide bandgap III-Nitride semiconductors : opportunities for future optoelectronics

Park Y. S.

Opto-Electronics Review

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2001

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Vol. 9, No. 2

117-124

EN

The world at the end of the 20th century has become "blue". Indeed, this past decade has witnessed a "blue rush" towards the develpment of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very and of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensor). Such opportunities and many others will be reviewed in this presentation.

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III-Nitride wide bandgap semiconductors : a survey of the current status and future trends of the material and device technology

Kung P., Razeghi M.

Opto-Electronics Review

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2000

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Vol. 8, No. 3

201-239

EN

During the past decade, group III-Nitride wide bandgap semiconductors have become the focus of extremely intensive reearch because of their exceptional physical properties and their high potential for use in countless numbers of applications. Nearly all aspects have been investigated, from the fundamental physical understanding of these materials to the development of the fabrication technology and demonstration of commercial devices. The purpose of this paper is to review the physical properties of III-Nitrides, their areas of application, the current status of the material technology (AlN, AlGaN, GaN, GaInN) including synthesis and processing. The state-of-the-art of III-Nitride material quality, as well as the devices which have been demonstrated, including electronic devices, AlxGa₁-xN ultraviolet photoconductors, ultraviolet photodiodes, visible light emitting diodes (LEDs) and ultraviolet - blue laser diodes, will also be presented.