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Dependence of mechanical and tribotechnical properties of multilayered TiN/ZrN coatings on deposition

Bondar O. V., Stolbovoy V. A., Kylyshkanov M. K., Plotnikov S. V., Erdybaeva N. K., Piotrowska K., Czarnacka K., Karwat C.

Przegląd Elektrotechniczny

2015

R. 91, nr 12

233-236

C-PVD method (vacuum arc deposition of a cathodes) was used for deposition of multilayered coatings, based on TiN/ZrN systems, with different thickness of bilayers. Total thickness of the coatings was 11 – 19 μm, thickness of bilayers varied from 39 to 305 nm for different samples depending on deposition conditions. Microstructure of the coatings, mechanical and tribotechnical properties, and wear resistance were explored. Influence of the bilayer thickness on such properties of the coatings, as hardness, elasticity modulus, wear resistance and wear ratio were explored.

Metoda C-PVD (napylanie próżniowo-łukowe katod) została użyta do osadzania wielowarstwowych powłok, na bazie układów TiN/ZrN o zmiennej grubości pojedynczych warstw. Całkowita grubość powłoki wynosiła 11 – 19 μm, przy czym grubość pojedynczych warstw wahała się od 39 do 305 nm dla różnych próbek zależnie od warunków osadzania. Zbadano mikrostrukturę powłok, właściwości mechaniczne i trybologiczne oraz odporność na zużycie.

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

Sengupta S., Shah S. Y., Halder N., Chakrabarti S.

Opto-Electronics Review

2010

Vol. 18, No. 3

295-299

Epitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 µm and 1.55 µm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 µm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.