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A new modeling of IGBT and Freewheeling diode based on electrical behavioral with independently of time condition

Boonpeang Worawut, Santalunai Samran, Thosdeekoraphat Thanaset, Thongsopa Chanchai

Przegląd Elektrotechniczny

2020

R. 96, nr 8

10--15

Several IGBT model proposed and constructed over the past years have exposed different essential qualities. However, in this paper, a new model of IGBT and Freewheeling diode based on electrical behavior is presented. The proposed parameters extraction process adopts the least squares regression and bilinear interpolation and, a two-level capacitance technique. and the model’s structure solely consists of fundamental components. In addition, the proposed model validates its simplicity for parameters extraction process, and its user-friendly application for a circuit topology of fundamental components. Some key factors of our proposed model are; independent time constraint, implementation flexibility, easily application by different topologies. These enumerated factors reinforce the reliability and suitability of our proposed model for a circuit simulation and optimization. The verification of our proposed model was steered with the use of an experimental circuit that consists of commercial components. Lastly, our simulation results showed a pattern of consistency with the experimental results.

W artykule opisano nowy model IGBT wykorzystujący diodę ruchu swobodnego (freewheeling diode).Model opiera się na niezależnym, ograniczeniu czasu, elastyczności zastosowania I łatwym zastosowaniu w różnych topologiach. Przeprowadzono symulację i optymalizację modelu. Wyniki zweryfikowano eksperymentalnie.

High accuracy computational methods for behavioral modeling of thick-film resistors at cryogenic temperatures

Balik F., Dziedzic A.

Materials Science Poland

2016

Vol. 34, No. 1

212--225

The aim of this work was to elaborate two-dimensional behavioral modeling method of thick-film resistors working in low-temperature conditions. The investigated resistors (made from 5 various resistive inks: 10 resistor coupons, each with 36 resistors with various dimensions), were measured automatically in a cryostat system. The low temperature was achieved in a nitrogen-helium continuous-flow cryostat. For nitrogen used as a freezing liquid the minimal temperature possible to achieve was equal to −195.85 °C (77.3 K). Mathematical model in the form of a multiplication of two polynomials was elaborated based on the above mentioned measurements. The first polynomial approximated temperature behavior of the normalized resistance, while the second one described the dependence of resistance on planar resistors dimensions. Special computational procedures for multidimensional approximation purpose were elaborated. It was shown that proper approximation polynomials and sufficiently exact methods of calculations ensure acceptable modeling errors.