Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Archives of Metallurgy and Materials

1 2016

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: barrier structures

Sortuj według:

Ogranicz wyniki do:

Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method

Świątek Z., Vlasov A. P., Ivashko M. V., Petryna R. L., Bonchyk A. Yu., Sokolovskii B. S.

Archives of Metallurgy and Materials

2016

Vol. 61, iss. 1

115--122

The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.