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EN
The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its growth rate.
EN
The study was carried out computer simulations of the formation process of AlN precipitates in the solidification of steel. The chemical composition of steel and non-metallic inclusions formed was determined using the commercial software FactSage. Calculated amount of precipitates formed during cooling of steel between the liquidus and solidus temperatures under conditions of thermodynamic equilibrium. In parallel, the computations were performed using your own computer program. It was found that aluminum nitride is formed at the final stage of solidification, and the condition of its formation is low oxygen content in steel.
3
Content available remote Rheology of concentrated suspensions of plasma-processed fine alumina
EN
The rheological properties (flow curves and viscoelastic behavior) of the injection-moulded suspensions prepared from two nanosized plasma-processed Al2O3 powders and water were investigated on wide ranges of shear rates and frequencies . Tiron (disodium salt of 4,5-dihydroxy-1,3-benzene-disulfonic acid) was chosen as a surfactant for preparation of the concentrated alumina suspensions. It is stated that, at an optimal Tiron content in suspensions, their viscosity, yield stress, and complex shear modulus have minimal values. A correlation was shown to exist between the optimal concentration of the dispersant obtained by rheological tests on the alumina powder water suspensions and the mentioned optimal concentration determined by measuring the zeta potential.
PL
Celem artykułu jest przybliżenie jednej z interesujących technik stosowanych do otrzymywania tworzyw ceramicznych - samorozwijającej się syntezy wysokotemperaturowej określanej w literaturze skrótowo SHS (Self-Propagating High-Temperature Synthesis). W technologiach tych wykorzystuje się reakcje chemiczne posiadające charakter egzotermiczny, a proces syntezy jest realizowany w warunkach, w których zjawiska mają gwałtowny przebieg typu spalania. Autorzy przedstawili prace własne nad zastosowaniem techniki SHS do otrzymywania proszków azotkowych z układu Si-Al-O-N takich jak azotek krzemu, azotek glinu i sialony. Omówiono warunki syntezy proszków i ich właściwości. Proszki te stanowiły bazę do otrzymywania gęstych polikrystalicznych tworzyw azotkowych drogą bezciśnieniowego spiekania. Przedstawiono przykłady takich spieków i ich wybrane charakterystyki.
EN
A goal of the paper is a presentation of one interesting ceramic technique called Self-Propagating High-Temperature Synthesis (SHS). SHS-based technologies utilize the exothermic chemical reactions and the synthesis is realized in such conditions where the processes have rapid, combustion-type character. The authors present own works on an application of the SHS technique for preparation nitrogen ceramic powders from the Si-Al-O-N system, namely silicon nitride, aluminum nitride and sialons. The SHS conditions and powders characterization are described. The powders have been processed to dense polycrystalline nitrogen materials by pressureless sintering. Sintering conditions and materials properties are discussed.
5
EN
The spraying method is based on the nitrogen impulse plasma treating of commercial AIN powder contaminated with oxygen. The powder is introduced into an impulse plasma accelerator in which electric discharge occurs under 100 Pa pressure. The plasma packed thus produced is nonisothermic and entirely ionzed. The energy relased in one 100 μs impulse is 1 kJ. As a result of the plasma - chemical treatment of a commercial AIN powder, a solid finegrainer aluminium nitride ("oxygen free") coating was formed.
PL
Metoda nanoszenia plazmowego jest podstawą impulsowo-plazmowego azotowania handlowego proszku AIN zanieczyszczonego tlenem. Proszek jest wprowadzany do akceleratora plazmy impulsowej przy ciśnieniu 100 Pa w chwili wyładowania elektrycznego. Tworząca się paczka plazmy jest nieizotermiczna i całkowicie zjonizowana. Energia wydzielona w impulsie 100 μs wynosi 1 kJ. W wyniku plazmochemicznej obróbki handlowego proszku AIN tworzyła się warstwa drobnoziarnistego azotku glinu ("beztlenowego").
6
Content available remote AIN layers plasmochemically produced as semiconductors
EN
The paper presents the results on investigations of heterojunction of nanocrystalline AlN layers of p-type with n-type Si. The layers were produced with the impulse plasma assisted MO CVD at 300 K. The heterostructures exhibited the photovoltaic effect with the enlarged spectral quantum efficiency as well as good rectifying and electroluminescence properties.
PL
W pracy zaprezentowano wyniki badań heterozłącz nanokrystalicznych warstw AIN typu p z Si typu n. Warstwy wytwarzane były w temperaturze 300 K plazmą impulsową towarzyszącą MOCVD. Heterostruktury wykazywały efekt fotowoltaniczny o powiększonej spektralnej wydajności kwantowej oraz dobre własności prostujące i elektroluminescencyjne.
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