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Regulated common-gate TIA with noise improvement for radiation detectors

Dias D. C, Melo F. S, Oliveira L. B., Oliveira J. P.

International Journal of Microelectronics and Computer Science

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2014

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Vol. 5, nr 2

69--80

EN

A Transimpedance Amplifier (TIA) is a device which performs current-voltage conversion and signal shaping. The most commonly used solution is an Avalanche Photo-Diode (APD) as radiation detector with a feedback TIA. Recently, Silicon Photo-Multipliers (SiPMs), have proven to be good alternatives. The main objective in this paper is to show, evaluate and compare the behavior of a regulated common-gate (RCG) TIA when the light sensitive device is an APD or a SiPM. We will also present two alternative circuits based on the RCG topology. The first can be resumed to the insertion of a transistor, responsible for an improvement in the output noise response of the TIA. This solution proves itself to be a good alternative, since it will improve the Signal-to-Noise Ratio (SNR) of the circuit by around 3 dB, with negligible penalty in consumption (only 2%). The second alternative will be a proposed differential version of the RCG topology, in which the first solution will be included. These two latter solutions will only be tested with a SiPM at the input. We will also study the RCG topology in a RF front-end, providing there is a passive mixer at the TIA’s input. The proposed circuits are simulated with standard CMOS technology (UMC 130 nm), from a 1.2 V supply.

2

Third-generation sensors for night vision

Norton P.

Opto-Electronics Review

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2006

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Vol. 14, No. 1

1-10

EN

Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3D imaging. Distinct programs for both cooled HgCdTe and uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdTe two-colour, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480x640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.

3

InGaAs for infrared photodetectors. Physics and technology

Kaniewski J., Piotrowski J.

Opto-Electronics Review

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2004

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Vol. 12, No. 1

139--148

EN

InGaAs is a variable band gap semiconductor with excellent transport and optical properties. This makes it attractive for electronic and optoelectronic devices. One of the most important applications is short wavelengh (1–3.6 µm) infrared photodetectors. Such devices are based on multilayer heterostructures with complex band gap and doping profiles. Significant progress in technology of the InGaAs heterostructures has been achieved with MBE and MOCVD growth. We discuss here the status and perspectives of infrared photodetectors based on advanced InGaAs heterostructures.

4

System do pomiarów ostrzowych fotodiod lawinowych TeOFiL 2001

Wójcik J., Zając J., Zaremba G.

Elektronika : konstrukcje, technologie, zastosowania

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2002

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Vol. 43, nr 12

5-8

PL

Omówiono specyficzne właściwości fotodiod lawinowych, stosowane procedury ich pomiarów i unikalne rozwiązania zastosowane w oprogramowaniu systemu.

EN

Features of the automatic system dedicated to testing semiconductor wafers containing avalanche photodiodes are presented. The paper contains descriptions of specific features of such photodiodes and used test methods. Main features of measurement devices used in the system and unique solutions applied in control software are described.